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BLF6G22LS-100
Power LDMOS transistor
Rev. 02 -- 31 March 2010 Product data sheet
1. Product profile
1.1 General description
100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1]
f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 25
Gp (dB) 18.2
D (%) 29
IMD3 (dBc) -37[1]
ACPR (dBc) -41[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 = -37 dBc ACPR = -41 dBc Easy power control Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (2000 MHz to 2200 MHz) Internally matched for ease of use Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the 2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2. Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
1 3 2
Graphic symbol
1
2 3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3. Ordering information Package Name BLF6G22LS-100 Description earless flanged LDMOST ceramic package; 2 leads Version SOT502B Type number
4. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS ID Tstg Tj Parameter drain-source voltage gate-source voltage drain current storage temperature junction temperature Conditions Min -0.5 -65 Max 65 +13 29 +150 225 Unit V V A C C
5. Thermal characteristics
Table 5. Symbol Rth(j-case) Thermal characteristics Parameter thermal resistance from junction to case Conditions Tcase = 80 C; PL = 25 W Typ Unit 0.43 K/W
BLF6G22LS-100_2
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
2 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
6. Characteristics
Table 6. Characteristics Tj = 25 C unless otherwise specified. Symbol Parameter V(BR)DSS drain-source breakdown voltage VGS(th) VGSq IDSS IDSX IGSS gfs RDS(on) Crs gate-source threshold voltage gate-source quiescent voltage drain leakage current drain cut-off current gate leakage current forward transconductance drain-source on-state resistance feedback capacitance Conditions VGS = 0 V; ID = 0.5 mA VDS = 10 V; ID = 150 mA VDS = 28 V; ID = 900 mA VGS = 0 V; VDS = 28 V VGS = VGS(th) + 3.75 V; VDS = 10 V VGS = 11 V; VDS = 0 V VDS = 10 V; ID = 7.5 A VGS = VGS(th) + 3.75 V; ID = 5.25 A VGS = 0 V; VDS = 28 V; f = 91 MHz Min 65 1.4 1.76 22 Typ 1.9 2.26 28 11 0.1 2.1 Max 2.4 2.76 5 450 0.16 Unit V V V A A nA S pF
7. Application information
Table 7. Application information Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test model 1; 1-64 PDPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz; f4 = 2167.5 MHz; RF performance at VDS = 28 V; IDq = 950 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production test circuit. Symbol Parameter PL(AV) Gp IRL D IMD3 ACPR average output power power gain input return loss drain efficiency adjacent channel power ratio PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W PL(AV) = 25 W Conditions Min 17 27.5 Typ 25 18.2 -9 29 -37 -41 Max -7 -34.5 -38.5 Unit W dB dB % dBc dBc
third-order intermodulation distortion PL(AV) = 25 W
7.1 Ruggedness in class-AB operation
The BLF6G22LS-100 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 950 mA; PL = 100 W (CW); f = 2170 MHz.
BLF6G22LS-100_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
3 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
7.2 One-tone CW
20 Gp (dB) 19
001aah695
Gp
60 D (%) 50
18 D 17
40
30
16
20
15
10
14 0 20 40 60 80 100
0 120 140 PL (W)
VDS = 28 V; IDq = 950 mA; f = 2140 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power; typical values
7.3 Two-tone CW
20 Gp (dB) 18 D
001aah696
60 D (%) 40
-20 IMD (dBc) -30
001aah697
IMD3
Gp
IMD5 -40 IMD7 -50 16 20 -60
14 0 60 120 PL(PEP) (W)
0 180
-70
0
60
120 PL(PEP) (W)
180
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (100 kHz).
VDS = 28 V; IDq = 950 mA; f = 2140 MHz (100 kHz).
Fig 2.
Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
Fig 3.
Two-tone CW intermodulation distortion as function of peak envelope load power; typical values
BLF6G22LS-100_2
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
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NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
7.4 2-carrier W-CDMA
21 Gp (dB) 19 Gp
001aah698
36 D (%) 24
-35 IMD3 ACPR (dBc) -40
001aah699
-45
17
D
12 -50 IMD3
ACPR 15 0 10 20 PL(AV) (W) 30 0 -55
0
10
20 PL(AV) (W)
30
VDS = 28 V; IDq = 950 mA; f = 2140 MHz ( 5 MHz); carrier spacing 10 MHz.
VDS = 28 V; IDq = 950 mA; f = 2140 MHz ( 5 MHz); carrier spacing 10 MHz.
Fig 4.
2-carrier W-CDMA power gain and drain efficiency as functions of average load power; typical values
Fig 5.
2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power; typical values
BLF6G22LS-100_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
5 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
8. Test information
C22
R1
C23
C3 C4 C5 C6 R2 C7 C9
C11
C13
C10
C12
C8 C1 C19 C20 C21
C2
C15 C16
C17
C18
INPUT PCB V1 TB
C14
OUTPUT PCB V2 TB
001aah700
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 8 for list of components. The drawing is not to scale.
Fig 6.
Component layout Table 8. C1 C2 List of components (see Figure 6) Description multilayer ceramic chip capacitor multilayer ceramic chip capacitor Value 5.6 pF 1.0 pF 1.5 F
[1] [1]
Component
Remarks
C3, C4, C12, C13, multilayer ceramic chip capacitor C17, C18 C5, C6, C10, C15 multilayer ceramic chip capacitor
SMD 0805; TDK or capacitor of same quality SMD 0603; Murata or capacitor of same quality
[1] [1]
100 nF
C7 C8
multilayer ceramic chip capacitor multilayer ceramic chip capacitor
1.5 pF 0.6 pF
BLF6G22LS-100_2
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(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
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NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
List of components (see Figure 6) ...continued Description multilayer ceramic chip capacitor Value 220 nF Remarks SMD 1206; AVX or capacitor of same quality
[1] [1] [1] [1]
Table 8. C9, C14
Component
C11, C16 C19 C20 C21 C22 C23 R1 R2
[1]
multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor multilayer ceramic chip capacitor tantalum capacitor electrolytic capacitor SMD resistor SMD resistor
10 pF 1.1 pF 0.5 pF 20 pF 10 F; 35 V 220 F; 35 V 3.6 5.1
American Technical Ceramics type 100B or capacitor of same quality.
BLF6G22LS-100_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
7 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
9. Package outline
Earless flanged LDMOST ceramic package; 2 leads SOT502B
D
A F
3
D1 D
U1
c
L
1
H
U2
E1
E
2
b w2 M D M Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 4.72 3.43 0.186 0.135 b 12.83 12.57 c 0.15 0.08 D D1 E 9.50 9.30 E1 9.53 9.25 F 1.14 0.89 H 19.94 18.92 L 5.33 4.32 0.210 0.170 Q 1.70 1.45 U1 20.70 20.45 U2 9.91 9.65 w2 0.25
20.02 19.96 19.61 19.66 0.788 0.786 0.772 0.774
0.505 0.006 0.495 0.003
0.374 0.375 0.366 0.364
0.045 0.785 0.035 0.745
0.067 0.815 0.057 0.805
0.390 0.010 0.380
OUTLINE VERSION SOT502B
REFERENCES IEC JEDEC JEITA
EUROPEAN PROJECTION
ISSUE DATE 03-01-10 07-05-09
Fig 7.
Package outline SOT502B
All information provided in this document is subject to legal disclaimers. (c) NXP B.V. 2010. All rights reserved.
BLF6G22LS-100_2
Product data sheet
Rev. 02 -- 31 March 2010
8 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
10. Abbreviations
Table 9. Acronym 3GPP CCDF CW DPCH LDMOS LDMOST PAR PDPCH RF VSWR W-CDMA Abbreviations Description Third Generation Partnership Project Complementary Cumulative Distribution Function Continuous Wave Dedicated Physical CHannel Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal-Oxide Semiconductor Transistor Peak-to-Average power Ratio transmission Power of the Dedicated Physical CHannel Radio Frequency Voltage Standing Wave Ratio Wideband Code Division Multiple Access
11. Revision history
Table 10. Revision history Release date 20100331 Data sheet status Product data sheet Preliminary data sheet Change notice Supersedes BLF6G22LS-100_1 Document ID BLF6G22LS-100_2 Modifications: BLF6G22LS-100_1
*
Table 7: Updated several values
20080218
BLF6G22LS-100_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
9 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
12. Legal information
12.1 Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. Product specification -- The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer's third party customer(s) (hereinafter both referred to as "Application"). It is customer's sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control -- This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications.
(c) NXP B.V. 2010. All rights reserved.
12.3 Disclaimers
Limited warranty and liability -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
BLF6G22LS-100_2
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Product data sheet
Rev. 02 -- 31 March 2010
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NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
BLF6G22LS-100_2
All information provided in this document is subject to legal disclaimers.
(c) NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 -- 31 March 2010
11 of 12
NXP Semiconductors
BLF6G22LS-100
Power LDMOS transistor
14. Contents
1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.3 7.4 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 2 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 31 March 2010 Document identifier: BLF6G22LS-100_2

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